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PDTC114ET PDF DOWNLOAD

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Author:BART RUSSOTTO
Language:English, Spanish, Hindi
Country:Bolivia
Genre:Environment
Pages:306
Published (Last):28.04.2015
ISBN:546-1-49641-705-9
ePub File Size:15.51 MB
PDF File Size:9.25 MB
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PIN It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. Ts is the temperature at the soldering point of the collector tab. November 5 20 —I C mA 30 Transition frequency as a function of collector current. November 6 10 Minimum noise figure as a function of frequency. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.

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